PSMN4R2-40VSHX parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Nexperia

Model:

PSMN4R2-40VSHX

Description:

PSMN4R2-40VSH - DUAL N-CHANNEL 4

Stock:

26227

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.56

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

98A(Ta)

Drain source voltage (Vdss)

40V

FET Type

2 N channels(half-bridge)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

37nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

2590pF @ 25V

On resistance (maximum) for different Ids and Vgs

4.2 mΩ @ 20A,10V

Power - maximum

85W(Ta)

Vgs (th) (maximum) for different Ids

3.6V @ 1mA

packing

TR,CT

series

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

SOT-1205,8-LFPAK56

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载PSMN4R2-40VSHX.pdf

PSMN4R2-40VSHX（FET, MOSFET）ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26227,Price reference "real-time change" China/Hongkong。 PSMN4R2-40VSHX package/specs, Download PSMN4R2-40VSHX、Datasheet。